Energy sensitive resist material and process for device fabrication using the resist material
US5688634A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1995 |
| Grant date | Nov 18, 1997 |
| Priority date | — |
| Expiry date | Dec 1, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is directed to a process for device or mask fabrication. In the process, an energy sensitive resist material that is the combination of a matrix polymer and a modifier polymer is formed onto a substrate. The modifier polymer and matrix polymer are phase compatible. In this regard the modifier polymer has a weight average molecular weight of about 5,000 to about 500,000 g/mol, and at least some of the polymer chains are terminated by a halogen moiety. The resist material is patternwise exposed to radiation, thereby introducing a latent image of the pattern into the resist material. The energy depolymerizes the modifier polymer. The modifier polymer is substantially less soluble in a developer solution used to develop the pattern introduced into the resist than is the matrix polymer. Therefore, if the resist material is positive acting, the resist material that is exposed to radiation is substantially more soluble in developer solution than the unexposed resist material. The developer solution is used to selectively remove the exposed portion of the resist material, thereby developing the pattern introduced into the resist material by the patternwise exposure. T…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.