Method of providing a dielectric structure for semiconductor devices
US5688724A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Nov 18, 1997 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric structure on a substrate includes a primary dielectric layer on the substrate, the primary dielectric being a metal oxide, such as tantalum pentoxide, having a high dielectric constant, and a secondary dielectric layer, such as an oxide or nitride of silicon, on the primary dielectric layer. In one embodiment, a multi-layer structure includes a second primary dielectric layer disposed on the secondary dielectric layer, and a second secondary dielectric layer disposed on the second primary dielectric layer, each primary dielectric layer being in a first crystalline state characterized by low leakage current for a given applied electrical field. A method of forming a dielectric structure on a substrate includes forming a layer of a primary dielectric, which is a metal oxide having a high dielectric constant, forming a secondary dielectric layer on the primary dielectric layer, and annealing the primary dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.