Method of manufacturing silicon on insulating substrate
US5691231A · kind A · utility
9Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1997 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Jan 7, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An insulation film is buried in portions of the bonding surface of one of the two silicon single crystal substrates, and in addition, a polycrystal silicon layer is formed on the bonding surface of the silicon single crystal substrate on the side into which the insulation film is buried.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.