Kensuke Okonogi
26Patents
9h-index
20Co-inventors
75Inventor score
Filing activity: Nov 29, 1993 → Feb 21, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5773152A | SOI substrate having a high heavy metal gettering effect for semiconductor device | Electricity | 86 | Expired |
| US6323109A | Laminated SOI substrate and producing method thereof | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5420064A | Method of manufacturing a dielectric isolation substrate | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6448157B1 | Fabrication process for a semiconductor device | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6004406A | Silicon on insulating substrate | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7846826B2 | Method of manufacturing a semiconductor device with multilayer sidewall | Electricity | 13 | Active |
| US5374582A | Laminated substrate for semiconductor device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5970366A | Method of removing metallic contaminants from simox substrate | Electricity | 12 | Expired |
| US5529947A | Semiconductor device with clad substrate and fabrication process therefor | Electricity | 11 | Expired |
| US5691231A | Method of manufacturing silicon on insulating substrate | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5798294A | Semiconductor substrate having a serious effect of gettering heavy metal and method of manufacturing the same | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6057036A | Semiconductor substrate having a serious effect of gettering heavy metal and method of manufacturing the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5849102A | Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7186632B2 | Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon | Electricity | 3 | Expired |
| US5726089A | Semiconductor device and method for fabricating the same | Electricity | 3 | Expired |
| US7129141B2 | Method for manufacturing a semiconductor device having a low junction leakage current | Electricity | 2 | Expired |
| US7151033B2 | Method for manufacturing a semiconductor device having a low junction leakage current | Electricity | 2 | Expired |
| US8704299B2 | Semiconductor device and manufacturing method thereof | Electricity | 2 | Active |
| US9236387B2 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US7338876B2 | Method for manufacturing a semiconductor device | Electricity | 1 | Expired |
| US7700431B2 | Method for manufacturing a semiconductor device having polysilicon plugs | Electricity | 0 | Active |
| US7666761B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US8674455B2 | Semiconductor device | Electricity | 0 | Active |
| US7737505B2 | Semiconductor device and method of forming the same | Electricity | 0 | Active |
| US7632696B2 | Semiconductor chip with a porous single crystal layer and manufacturing method of the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.