Process for growing a film epitaxially upon a MgO surface
US5693140A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1995 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Sep 18, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.