Method for damage etching the back side of a semiconductor disk having a protected front side
US5693182A · kind A · utility
22Cited by
2References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 21, 1996 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Feb 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making large scale integrated circuits on a disklike semiconductor substrate includes grinding a disk thin enough to be able to be sawn apart into individual chips. A damage zone caused by the grinding on a back side of the wafer is removed by etching while protecting a front side of the wafer, prior to sawing. The etching is carried out in the form of a microwave or high-frequency-excited downstream plasma etching process using fluorine compounds in an etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.