Method of forming silicon carbide trench mosfet with a schottky electrode
US5693569A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 1996 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Dec 18, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequentially formed by epitaxial growth on the semiconductor substrate. The first conductivity type drift layer has a lower impurity concentration than the semiconductor substrate. A first conductivity type source region is formed in a part of a surface layer of the second conductivity type base layer. A gate electrode is received through an insulating film, in a first trench extending from a surface of the first conductivity type source region to reach the first conductivity type drift layer. A Schottky electrode disposed on an inner surface of a second trench having a greater depth than the first trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.