Non-volatile ferroelectric memory device equipped with reference voltage generator for exactly regulating reference voltage to the mid point between two logic level and method of reading out data bit therefrom
US5694353A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1996 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Sep 24, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile ferroelectric memory cell supplies electric charge from the ferroelectric capacitor to one of bit lines so as to rise the bit line to one of a first potential level representative of logic "1" level and a second potential level representative of logic "0" level, and a reference voltage generator generates a reference voltage level exactly adjusted to the mid point between the first potential level and the second potential level by supplying electric charge from a dummy memory cell storing a dummy data bit of logic "1" level and another dummy memory cell storing a dummy data bit of logic "0" level to the other of the bit lines and an adjacent bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.