Inventor · Miyoshi, JP

Hiroki Koike

60Patents
14h-index
67Co-inventors
87Inventor score

Filing activity: Sep 5, 1991 → Jun 1, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US5926413A Ferroelectric memory device Physics 86 Expired
US5544106A Semiconductor memory device with redundant decoder available for test sequence on redundant memory cells Physics 76 Expired
US5600587A Ferroelectric random-access memory Physics 66 Expired
US5615144A Non-volatile ferroelectric memory device with leakage preventing function Physics 42 Expired
US5574679A Memory data protection for a ferroelectric memory Physics 41 Expired
US5671174A Ferroelectric memory device Physics 41 Expired
US5694353A Non-volatile ferroelectric memory device equipped with reference voltage generator for exactly regulating reference voltage to the mid point between two logic level and method of reading out data bit therefrom Physics 38 Expired
US7534914B2 Substituted methyl aryl or heteroaryl amide compounds Chemistry; Metallurgy 32 Active
US5617349A Ferroelectric memory and method for controlling operation of the same Physics 30 Expired
US6869960B2 N-substituted spiropiperidine compounds as ligands for ORL-1 receptor Chemistry; Metallurgy 24 Expired
US5668753A Ferroelectric memory and method for controlling operation of the same Physics 23 Expired
US7448487B2 Transporting apparatus Physics 23 Active
US5337282A Dynamic random access memory device with refreshing system powered with external power source in trimming stage instead of built-in step-down circuit Physics 22 Expired
US6288950A Semiconductor memory device capable of generating offset voltage independent of bit line voltage Physics 21 Expired
US5202854A Semiconductor memory circuit Physics 14 Expired
US5392242A Semiconductor memory device with single data line pair shared between memory cell arrays Physics 13 Expired
US6608070B1 2,3-substituted indole compounds as anti-inflammatory and analgesic agents Chemistry; Metallurgy 13 Expired
US5940316A Ferroelectric memory device using a ferroelectric material and method of reading data from the ferroelectric memory device Physics 12 Expired
US8084476B2 Substituted methyl aryl or heteroaryl amide compounds Chemistry; Metallurgy 12 Active
US8234941B2 Specimen analyzing apparatus and specimen analyzing method Physics 11 Active
US5473195A Semiconductor integrated circuit device having parallel signal wirings variable in either width or interval Electricity 9 Expired
US7723321B2 Chromane substituted benzimidazole derivatives Chemistry; Metallurgy 8 Active
US8329102B2 Conveying device and sample processing method Physics 7 Active
US9466363B2 Integrated circuit Electricity 7 Active
US5557235A Semiconductor device comprising a grounding pad near a reference signal pad and a capacitor between the pads Electricity 7 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.