Method for fabricating a semiconductor device using a catalyst introduction region
US5696003A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1994 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Dec 16, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/016
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.