MOS-type semiconductor integrated circuit device
US5696400A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1995 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Sep 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
A semiconductor integrated circuit device comprises an input terminal for inputting a voltage, an output terminal for outputting a voltage, a MOS driver disposed between the input terminal and the output terminal for adjusting the voltage of the input terminal and transmitting it to the output terminal, and a MOS control circuit for controlling the MOS driver and feeding back voltage information of the output terminal. Each of the MOS driver and the MOS control circuit has a MOS transistor formed on a semiconductor substrate, and each MOS transistor has a source region, a drain region, a channel region disposed between the source region and the drain region, a gate insulating film disposed over the channel region, and a gate electrode disposed over the gate insulating film. The gate insulating films of the MOS transistors have different film thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.