Method and a device for oxidation of a semiconductor layer of SIC
US5698472A · kind A · utility
10Cited by
4References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 7, 1996 |
| Grant date | Dec 16, 1997 |
| Priority date | — |
| Expiry date | Mar 7, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method and device for oxidation of a semiconductor layer of SiC at the surface thereof for forming an insulating surface layer of SiO.sub.2, in which the semiconductor layer is heated and oxygen is fed to the surface of the semiconductor layer for diffusing thereinto and reacting with the SiC in the surface layer while oxidating it to form SiO.sub.2 and C-oxides that diffuse out of the semiconductor layer, wherein the surface of the semiconductor layer is illuminated by vacuum ultraviolet light during at least a phase of the oxidation to improve the quality of the SiO.sub.2 layer formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.