Turn-off, MOS-controlled, power semiconductor component

US5698867A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventors

• Friedhelm Bauer · Suhr, CH
• Raymond Vuilleumier · Neuchâtel, CH

Key dates

• Filing date: Mar 24, 1995
• Grant date: Dec 16, 1997
• Expiry date: Mar 24, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/655

Abstract

In a MOS-controlled turn-off thyristor (MCT), a conventional integral cell with a combined emitter and short-circuiting function is replaced by a separate DMOS cell (D) and emitter cell (E). The DMOS cell (D) contains a five-layer sequence of cathode short-circuit region (18), first channel region (19), second base layer (7), first base layer (8) and emitter layer (9). The emitter cell (E) contains a four-layer sequence of first emitter region (20), second base layer (7), first base layer (8) and emitter layer (9). This basic structure produces a component which is easy to produce and is distinguished by a high reverse-blocking capability.