High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
US5698870A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1996 |
| Grant date | Dec 16, 1997 |
| Priority date | — |
| Expiry date | Jul 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A periodic table group III-IV HEMT/PHEMT field-effect transistor device and its fabrication is described. The disclosed fabrication arrangement uses a single metallization for ohmic and Schottky barrier contacts, employs selective etching with a permanent etch stop layer, employs a non-alloyed ohmic contact semiconductor layer and includes a permanent non photoresponsive secondary mask element affording several practical advantages during fabrication and in the completed transistor. The invention includes provisions for both an all-optical lithographic fabrication process and a combined optical and electron beam lithographic process. These concepts are combined to provide a field-effect transistor device of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.