Gregory C. DeSalvo
14Patents
10h-index
20Co-inventors
64Inventor score
Filing activity: Jul 22, 1996 → May 31, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6657525B1 | Microelectromechanical RF switch | Electricity | 63 | Expired |
| US5698870A | High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal | Electricity | 38 | Expired |
| US5698900A | Field effect transistor device with single layer integrated metal and retained semiconductor masking | Electricity | 33 | Expired |
| US6222210A | Complementary heterostructure integrated single metal transistor apparatus | Electricity | 32 | Expired |
| US5869364A | Single layer integrated metal process for metal semiconductor field effect transistor (MESFET) | Electricity | 32 | Expired |
| US6884717B1 | Stiffened backside fabrication for microwave radio frequency wafers | Electricity | 27 | Expired |
| US6004881A | Digital wet etching of semiconductor materials | Electricity | 23 | Expired |
| US5976920A | Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5940694A | Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6020226A | Single layer integrated metal process for enhancement mode field-effect transistor | Electricity | 11 | Expired |
| US6198116A | Complementary heterostructure integrated single metal transistor fabrication method | Electricity | 10 | Expired |
| US5796131A | Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal | Electricity | 5 | Expired |
| US6066865A | Single layer integrated metal enhancement mode field-effect transistor apparatus | Electricity | 3 | Expired |
| US6653214B1 | Measured via-hole etching | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.