Microwave plasma processing apparatus
US5700326A · kind A · utility
3Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1995 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Feb 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32275
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.