Negative-working photoresist composition
US5700625A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1996 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Apr 10, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/038
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a novel chemical-sensitization type negative-working photoresist composition capable of exhibiting high sensitivity to actinic rays and giving a patterned resist layer with high resolution and excellently orthogonal cross sectional profile of the patterned resist layer without occurrence of microbridges. The composition comprises (a) a poly(hydroxystyrene)-based resin; (b) a compound capable of releasing an acid by the irradiation with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; and (c) a crosslinking agent such as a urea resin and melamine resin, each in a specified weight proportion, the poly(hydroxystyrene)-based resin as the component (a) having such a dispersion of the molecular weight distribution that the ratio of the weight-average molecular weight M.sub.w to the number-average molecular weight M.sub.n does not exceed 1.4 and being substantially free from low molecular weight fractions including unpolymerized monomer and oligomers having a molecular weight smaller than 1000.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.