Method of fabricating buried control elements in semiconductor devices
US5700703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1996 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Aug 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating buried control elements in a semiconductor device by providing a substrate and forming an epitaxial layer on the substrate. A native oxide is formed on the surface, and a mask is then positioned adjacent the surface so as to define a growth area and an unmasked portion. A bright light is selectively directed to grow an oxide film on the unmasked portion of the surface. After forming the oxide film, the native oxide on the growth area is desorbed and a buried control element layer is grown on the epitaxial layer. Subsequently, the oxide film is desorbed and the epitaxial layer is regrown, thereby burying the buried control element layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.