Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same
US5701268A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1996 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Aug 23, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Integrated circuit memory devices include at least first and second memory cells electrically coupled to respective first and second sense bit signal lines of a sense amplifier. The sense amplifier comprises a circuit for amplifying a difference in potential between the first and second sense bit signal lines by driving these lines to respective first and second different potentials. A driving circuit is also provided for simultaneously driving the first and second sense bit signal lines towards the first potential in response to application of a boost control signal. This driving circuit preferably comprises a first capacitor electrically connected in series between the boost control input and the first sense bit signal line and a second capacitor electrically connected in series between the boost control input and the second sense bit signal line. The boost control signal is established at the first potential to drive both the sense bit signal lines from different intermediate potentials (e.g., 1/2VCC+, 1/2VCC) towards the first potential, prior to amplification of the difference in potential between the first and second sense bit signal lines by the sense amplifier. The present …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.