Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same
US5702849A · kind A · utility
17Cited by
8References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 26, 1996 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | Sep 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1284
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for transferring a pattern in which durability can be improved and a very fine circuit pattern of a light-shielding film can be formed, and a manufacturing method thereof are obtained. In the mask for transferring a pattern, a silicon monocrystalline film 2, an aluminum monocrystalline film 3 and an aluminum oxide film 4 are formed on a mask substrate 1 so as to have a prescribed pattern feature. Silicon monocrystalline film 2 and aluminum monocrystalline film 3 serve as the light-shielding film. Aluminum oxide film 4 serves as an anti reflection and protection film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.