Positive photoresist composition
US5702861A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1997 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | Jan 30, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition comprising: (A) an alkali-soluble resin; (B) a quinone diazide group-containing compound; and (C) at least one compound selected from the polyhydroxy compounds, such as 1,3-bis2-(5-cyclohexyl-2-methyl-4-hydroxyphenyl)-2-propyl!benzene. The composition of the present invention exhibits excellent image contrast between exposed portions and unexposed portions, and actualizes formation of a resist pattern with excellent resolution, exposure range, and focal depth range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.