Method for isolating semiconductor device
US5702975A · kind A · utility
8Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1996 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | Sep 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for isolating a semiconductor device is disclosed including the steps of sequentially growing a plurality of material layers on a semiconductor substrate, etching the material layers down to a predetermined depth of the substrate to thereby define an active region, forming a semi-insulating film on the exposed semiconductor substrate in order to planarize the step-difference of the active region and the isolation region, and then, forming an ohmic metal layer on a space where the semi-insulating film is regrown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.