Method for manufacturing porous blue light emitting diode
US5705047A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 12, 1996 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Apr 12, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
Abstract
A method for manufacturing a porous blue light emitting diode comprising the steps of preparing a silicon substrate having a back surface, applying a conducting layer on the back surface, annealing the substrate coated with the conducting layer in an inert gas atmosphere, applying an anti-corrosion layer on the conducting layer, immersing the anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of about 5% by volume, applying a voltage to the resulting layers for eroding the anti-corrosion layer-applied substrate to form a porous layer having Si wires on a top surface of the substrate, and oxidizing the porous layer for making sizes of the Si wires small enough for emitting light having a peak occuring at a wavelength shorter than about 520 nm. This method offers a simple and feasible way to fabricate a porous blue light emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.