Method of forming high performance bipolar devices with improved wiring options
US5705407A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1996 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Aug 2, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-performance bipolar transistors with improved wiring options and fabrication methods therefore are set forth. The bipolar transistor includes a base contact structure that has multiple contact pads which permit multiple device layouts when wiring to the transistor. For example, a first device layout may comprise a collector-base-emitter device layout, while a second device layout may comprise a collector-emitter-base device layout. More specifically, the base contact structure at least partially surrounds the emitter and has integral contact pads which extend away from the emitter. Further, sections of the base contact structure are disposed on an insulating layer outside of the perimeter of the base region of the transistor, while other sections directly contact the base region. Specific details of the bipolar transistor, and fabrication methods therefore are also set forth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.