Michael D. Hulvey
9Patents
2h-index
17Co-inventors
44Inventor score
Filing activity: Nov 29, 1994 → Feb 5, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5631495A | High performance bipolar devices with plurality of base contact regions formed around the emitter layer | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6657280B1 | Redundant interconnect high current bipolar device | Electricity | 2 | Expired |
| US6998699B2 | Redundant interconnect high current bipolar device and method of forming the device | Electricity | 2 | Expired |
| US8458628B2 | Method for compensating for variations in structures of an integrated circuit | Physics | 1 | Active |
| US7317240B2 | Redundant interconnect high current bipolar device and method of forming the device | Electricity | 1 | Expired |
| US5705407A | Method of forming high performance bipolar devices with improved wiring options | Emerging Cross-Sectional Technologies | 1 | Expired |
| US8176446B2 | Method for compensating for variations in structures of an integrated circuit | Physics | 1 | Active |
| US8438509B2 | Automated generation of oxide pillar slot shapes in silicon-on-insulator formation technology | Emerging Cross-Sectional Technologies | 0 | Active |
| US8881072B2 | Method for compensating for variations in structures of an integrated circuit | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.