Process for forming an electrically programmable read-only memory cell
US5705415A · kind A · utility
178Cited by
12References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1994 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Oct 4, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A semiconductor device is formed having a floating gate memory cell (11) that has its channel region (33) oriented vertically with a portion of the channel region (33) that is not capacitively coupled to a floating gate (32). The memory cell (11) is less likely to be over-erased and may be programmed by source-side injection. The cell (11) may not need to be repaired after erasing. Less power may be consumed during programming compared to hot electron injection and Fowler-Nordheim tunneling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.