Semiconductor device formed using a catalyst element capable of promoting crystallization
US5705829A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1996 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Jan 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which the crystallized film is further exposed to a laser light for improving the crystallinity. The concentration of the catalyst metal in the semiconductor film and the location of the region to be added with the catalyst metal are so selected in order that a desired crystallinity and a desired crystal structure such as a vertical crystal growth or lateral crystal growth can be obtained. Further, active elements and driver elements of a circuit substrate for an active matrix type liquid crystal device are formed by such semiconductor devices having a desired crystallinity and crystal structure respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.