Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method
US5705831A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1995 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Apr 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.