Bias-free symmetric dual spin valve giant magnetoresistance transducer
US5705973A · kind A · utility
48Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1996 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Aug 26, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A giant magnetoresistive dual spin valve sensor employs at least one magnetic biasing layer located adjacent to an antiferromagnetic layer in the spin valve structure which includes two pinned ferromagnetic layers. The antiferromagnetic layer simultaneously pins the biasing layer and the ferromagnetic layer nearest the antiferromagnetic layer. This structure eliminates the bias point offset present in prior dual spin valve sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.