Method of heat-treating semiconductor crystal of a group II-group VI compound
US5707900A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1996 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Nov 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Known MBE methods of heat-treating semiconductor crystal of a group II-group VI compound for crystal growth are accompanied by a problem of releasing the component elements during the heat-treatment to produce a coarse crystal surface that adversely affects the subsequent crystal growth steps. According to the invention, this problem is eliminated by irradiating a substrate of a group II-group VI compound, specifically ZnSe, with Zn beams and Se beams depending on the vapor pressures of the elements between the respective starting points and the respective terminating points to compensate the released Zn and Se so that consequently no oxide film is formed on the ZnSe substrate when the heat-treatment is completed to produce a plane crystal surface that is free from coarseness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.