Method utilizing an etch stop layer
US5707901A · kind A · utility
23Cited by
13References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1996 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Jul 29, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etch stop layer prevents damage to the underlying semiconductor material or metallization layer during etching of a dielectric layer overlying the etch stop layer. The etch stop layer, aluminum nitride or aluminum oxide is used underlying silicon dioxide to prevent damage to the semiconductor material during a fluorocarbon based etch of the silicon dioxide. The etch stop layer is also used underlying a silicon dioxide layer and overlying a titanium nitride or titanium tungsten layer used in metallization to prevent etching of the titanium nitride or titanium tungsten layer during etching of the silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.