Thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection and method

US5708288A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• John H. Quigley · Phoenix, US
• Jeremy C. Smith · Austin, US
• Percy V. Gilbert · Austin, US
• Shih-Wei Sun · Taipei, TW

Key dates

• Filing date: Nov 2, 1995
• Grant date: Jan 13, 1998
• Expiry date: Nov 2, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A thin film silicon on insulator circuit with a low voltage triggered, surface silicon controlled rectifier (30) for electrostatic damage protection and method is provided. A surface silicon controller rectifier (30) is formed in a thin device layer (130), overlying a buried insulation layer (110) and electrically coupled to a low voltage trigger apparatus (36). In one embodiment, a zener diode is employed as the low voltage trigger apparatus (36), and in another embodiment low voltage trigger apparatus (36) is an n-channel MOSFET.