Method for fabricating a semiconductor device
US5710050A · kind A · utility
71Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1995 |
| Grant date | Jan 20, 1998 |
| Priority date | — |
| Expiry date | Jul 24, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
Abstract
The semiconductor device of the invention includes: a substrate having an insulating surface; and an active region which is formed on the insulating surface of the substrate and is constituted by a crystalline silicon film. In the semiconductor device, the active region is formed inside a crystalline silicon region formed by selective crystallization of an amorphous silicon film, and the active region is positioned by performing a mask alignment using a boundary between an amorphous silicon region of the amorphous silicon film and the crystalline silicon region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.