Method for producing a semiconductor device having a semiconductor layer of SiC by implanting
US5710059A · kind A · utility
63Cited by
3References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 24, 1996 |
| Grant date | Jan 20, 1998 |
| Priority date | — |
| Expiry date | Apr 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device comprises a step of implanting first conductivity type impurity dopants of at least two different elements in a semiconductor layer being doped according to a second opposite conductivity type, and after that anneal the semiconductor layer at such a high temperature that one of said elements is diffusing slowly into the semiconductor layer and the other is diffusing rapidly thereinto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.