Kurt Rottner
10Patents
6h-index
14Co-inventors
55Inventor score
Filing activity: Apr 23, 1990 → Oct 23, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6104043A | Schottky diode of SiC and a method for production thereof | Electricity | 66 | Expired |
| US6040237A | Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge | Emerging Cross-Sectional Technologies | 64 | Expired |
| US5710059A | Method for producing a semiconductor device having a semiconductor layer of SiC by implanting | Electricity | 63 | Expired |
| US6002159A | SiC semiconductor device comprising a pn junction with a voltage absorbing edge | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6703294B1 | Method for producing a region doped with boron in a SiC-layer | Electricity | 9 | Expired |
| US5705406A | Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5902117A | PN-diode of SiC and a method for production thereof | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5849620A | Method for producing a semiconductor device comprising an implantation step | Electricity | 5 | Expired |
| US5674765A | Method for producing a semiconductor device by the use of an implanting step | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5053727A | Circuit coupling an oscillator to an electrical load | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.