Gate turn-off thyristor for high blocking voltage and small component thickness

US5710445A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventors

• Friedhelm Bauer · Suhr, CH
• Simon Eicher · Zürich, CH

Key dates

• Filing date: Jun 27, 1995
• Grant date: Jan 20, 1998
• Expiry date: Jun 27, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode short-circuits (10). By virtue of the combination of the barrier layer, the transparent anode emitter and the anode short-circuits, a GTO is obtained which can be operated at high switching frequencies, the substrate thickness of which can be reduced and which nevertheless exhibits no increase in the switching losses.