Semiconductor device having electrostatic breakdown protection circuit
US5710452A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 3, 1996 |
| Grant date | Jan 20, 1998 |
| Priority date | — |
| Expiry date | Apr 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A semiconductor device includes a metallic main line connected between an external terminal and an internal circuit, and a plurality of divided protection bipolar transistors connected in parallel to one another. Each of the divided protection bipolar transistors includes a collector and an emitter composed of first and second N diffused regions formed in a semiconductor substrate which are separated from each other. Each of the divided protection bipolar transistors also includes a base formed of a portion of a semiconductor substrate between the collector and the emitter. The collector is connected to a metallic sub line branched from the main line, and the emitter is connected to ground. The plurality of divided protection bipolar transistors have an equal breakdown voltage between the collector of the divided protection bipolar transistor and the semiconductor substrate. Thus, the protection device composed of a plurality of divided protection bipolar transistors connected in parallel to one another can effectively protect the internal circuit from a short electrostatic pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.