Epitaxial crystal growth apparatus
US5711813A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1995 |
| Grant date | Jan 27, 1998 |
| Priority date | — |
| Expiry date | Sep 22, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An epitaxial growth apparatus includes a substrate heating member, a growth chamber, a molecular beam source, a nozzle for ejecting a gaseous source material, an exhaust pipe, and a vacuum chamber. When a gate valve is opened between the vacuum chamber and the growth chamber, gas is exhausted from the growth chamber, and the pressure in the growth chamber is rapidly reduced. The transition from a state where the degree of vacuum is low to a state where the degree of vacuum is high is performed rapidly. Therefore, one crystalline growth apparatus is sufficient for freely selecting among growth modes to achieve desired thickness and controllability of the carrier concentration in an epitaxially grown layer. One mode requires selectivity and another mode suppresses dopant concentration for epitaxial growth of layers of an optical device or of a microwave device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.