Process optimization in gas phase dry etching
US5711849A · kind A · utility
14Cited by
9References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 1995 |
| Grant date | Jan 27, 1998 |
| Priority date | — |
| Expiry date | May 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.