Method of making semiconductor device with self-aligned insulator
US5712173A · kind A · utility
45Cited by
9References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 24, 1996 |
| Grant date | Jan 27, 1998 |
| Priority date | — |
| Expiry date | Jan 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.