Method of growing compound semiconductor layer
US5714006A · kind A · utility
23Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1995 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Dec 18, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a compound semiconductor layer includes epitaxially growing a III-V compound semiconductor layer including nitrogen (N) for as the Group V element on a front surface of a semiconductor substrate of cadmium telluride (CdTe). Therefore, the atoms of the crystal lattice of the III-V compound semiconductor layer are periodically lattice-matched with the atoms of the crystal lattice of the CdTe semiconductor substrate, whereby the III-V compound semiconductor layer is epitaxially grown with high crystalline quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.