Piezoresistive silicon pressure sensor manufacture implementing long diaphragms with large aspect ratios
US5714690A · kind A · utility
33Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1996 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Aug 9, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A form pressure sensor diaphragm and method of making that allows for formation of long rectangular plate structures in semiconducting materials, especially silicon. A plurality or multiplicity of sensors may be constructed on a single chip, thus providing for absolute and relative sensing of pressure on a single device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.