Method of manufacturing light converter with amorphous-silicon pin heterojunction diode
US5714772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1996 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Jul 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/155
Abstract
A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.