Semiconductor device utilizing silicide reaction
US5714795A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1995 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Nov 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device capable of high-speed writing and reading and having extremely high reliability. The semiconductor device includes a plurality of cells each having a semiconductor layer between a pair of conductors. At least one of the pair of conductors is made of a metal and the semiconductor layer is made of a-Si which forms a silicide region having a width of 150 nm or less by silicide reacting with the metal at a reaction speed of 10 m/sec or higher. Alternatively, at least one of the pair of conductors is made of a metal which silicide reacts with a-Si to form a silicide region having a conical structure with a diameter of 150 nm or less. Otherwise, at least one among the pair of conductors is formed of a metal which forms a silicide region of 150 nm or less by reacting with a-Si. The interface between the semiconductor layer and the conductors is not exposed to an external oxygen containing atmosphere during processing so that no oxygen containing compound exists at this interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.