Magnetoresistance element, magnetoresistive head and magnetoresistive memory
US5715121A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1996 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Dec 18, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2495
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance element has a structure of a magnetic film 3, a nonmagnetic film 2 and a magnetic film 1 layered successively, and the nonmagnetic film is made of a mixture of electrical conductors and insulators. Then, magnetic coupling between the magnetic films 1 and 3 is reduced. Further, because it is possible to detect a magnetic field by supplying a current along a film plane, a large change in magnetoresistance is observed, or the sensitivity is high. Modified magnetoresistance elements are also described including a film 4 suppressing magnetization reversal or an interface magnetic film 5. A magnetic head for a hard disk is produced by adding a yoke to the magnetoresistance element. A memory device having a plurality of magnetoresistance elements is produced by adding word lines and the like thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.