Dark rims for attenuated phase shift mask
US5716738A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1996 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/29
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for use in semiconductor fabrication which includes a light transparent substrate, preferably glass, having a border and light semitransparent material having light transmissivity preferably in the range of from about 6 to about 10 percent disposed thereon within the border. A light opaque layer which is sensitive to light and which can be patterned and have a predetermined portion thereof removed in response to selective exposure to light is disposed along substantially the entire border of the substrate. The mask can further include a region of light semitransparent material disposed around the border and under the light opaque layer. The light opaque layer is preferably a photosensitive polyimide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.