Optical semiconductor device
US5717710A · kind A · utility
28Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1995 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | Nov 15, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2272
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an optical semiconductor device including a DFB laser and a light absorption modulator, a semi-insulating semiconductor layer is disposed between a carrier blocking layer and a upper cladding layer, the upper cladding layer having an opposite conductivity type from that of the semiconductor substrate and disposed on a buried waveguide and the carrier blocking layer. The capacitance between the carrier blocking layer and the upper cladding layer is reduced. Therefore, mutual interference between the DFB laser and the light absorption modulator through the carrier blocking layer is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.