Enhanced reactive DC sputtering system
US5718813A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1993 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Apr 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0206
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.