Method for manufacturing semiconductor device with removable spacers
US5719065A · kind A · utility
164Cited by
10References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1994 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Sep 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
Abstract
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.