Method for isolating elements of semiconductor device
US5719086A · kind A · utility
4Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1996 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Nov 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for isolating the elements of semiconductor devices, in which bird's beak can be restrained by accumulating nitrogen atoms between a pad oxide film and a silicon substrate and the etch depth of a silicon substrate can be controlled by use of wet etch to remove the oxide which is grown on the silicon substrate at a low temperature after formation of nitride spacer, thereby reproducing good profiles of the field oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.